Tags » CVD

Nitrogen CVD precursors

Ammonia NH3

  • Melting point -77.75°C
  • Boiling point -33.42°C
  • Critical temperature 132.3°C
  • Critical pressure 11.3 MPa
  • Molar mass  17.03 g/mol

Hydrazine N2H4

CVD

Silicon CVD precursors

Halide Precursors

Silicon Tetrachloride SiCl4

  • Melting point -68.9°C
  • Boiling point 57.0°C
  • Condensed phase density 1.48g/cm3 (at 20°C)
  • Molar mass 169.9 g/mol

Silicon Tetrafluoride SiF4

CVD

Titanium CVD precursors

Halide Precursors

Titanium Tetrachloride TiCl4

  • Melting point -24.1°C
  • Boiling point 136.4°C
  • Condensed phase density 1.727g/cm3 (at 20°C)
  • Molar mass 189.71 g/mol
CVD

Boron CVD precursors

Halide precursors

Boron Trifluoride BF3

  • Melting point  -128°C
  • Boiling point -100°C
  • Critical temperature -12.3°C
  • Critical pressure 4.99 MPa
  • Molar mass 67.81 g/mol

Boron Trifluoride BCl3… 25 more words

CVD

Gallium Nitride

Halide/Hydride vapor phase epitaxy

Gallium Monochloride precursor

In typical HVPE process for GaN deposition gallium monochloride GaCl and ammonia NH3 are used as precursors of gallium and nitrogen: 339 more words

CVD

Chemical vapor deposition reactions

Pure elements

  • Transition metal film:  Ti, Mo, W, Nb, Re, Ta, Zr, Hf
  • Non-metal film: B, C, Si, Ge

Binary compounds

  • Carbides: B4C, SiC, TiC, WC, HfC, NbC, TaC, VC, ZrC…
  • 46 more words
CVD

Vanadium CVD precursors

Halide precursors

Vanadium pentafluoride VF5

  • Melting point 19.5°C
  • Boiling point 48°C
  • Condensed phase density 2.48 g/cm3  (at 20°C)
  • Molar mass   145.9 g/mol

Vanadium tetrachloride VCl4… 101 more words

CVD